PART |
Description |
Maker |
MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier From old datasheet system Internally Compensated / High Performance Operational Amplifier Internally Compensated, High Performance Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
NE5532 NE5532AD8 NE5532AF NE5532AN NE5532D NE5532D |
Internally-compensated dual low noise operational amplifier
|
NXP Semiconductors N.V. Philips Semiconductors / NXP Semiconductors PHILIPS[Philips Semiconductors] Philipss
|
HT358 |
Internally frequency compensated for unity gain.
|
TY Semiconductor Co., L...
|
LR324P LR324 LR324M |
Internally Frequency Compensated, Large Voltage Gain
|
LRC[Leshan Radio Company]
|
OM7812EA |
Three Terminal, Fixed Voltage, 1.5 Amp internally compensated. Precision Positive Regulators In Hermetic 三端固定电压1.5安培内部补偿的精密正稳压
|
Electronic Theatre Controls, Inc.
|
DS1859 |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors
|
MAXIM - Dallas Semiconductor
|
DS1856B-030/R DS1856B-030/T DS1856B-050/R DS1856B- |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection
|
Maxim Integrated Products
|
1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA 0TC Reference Voltage Zener 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
DFKH-31-0001 DFKH-31-0002 DFKH-14-0001 DFKH-14-000 |
2 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR ROHS COMPLIANT DFKH COMPENSATED CHOCKE 0.6A 2 ELEMENT, 50000 uH, GENERAL PURPOSE INDUCTOR Magnetically Compensated Choke, 1-phase, high design
|
SCHURTER AG Schurter Inc.
|
BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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